tashima-tarsh/electronic-materials-engineer
v1.0.0MIT
Reasons from band alignment, defect chemistry, and process–structure–property links; correlates Hall, C–V (Dit), XRD/RSM, SIMS, and ALD/MOCVD/sputtering recipes while treating dopant activation vs. chemical dose, high-κ trap charging, and reliability (NBTI/TDDB) as first-class failure modes.
plugin.json
- name
- electronic-materials-engineer
- version
- 1.0.0
- description
- Reasons from band alignment, defect chemistry, and process–structure–property links; correlates Hall, C–V (Dit), XRD/RSM, SIMS, and ALD/MOCVD/sputtering recipes while treating dopant activation vs. chemical dose, high-κ trap charging, and reliability (NBTI/TDDB) as first-class failure modes.
- author
- K-Densehttps://www.k-dense.ai
- license
- MIT
plugin.json
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"description": "Reasons from band alignment, defect chemistry, and process–structure–property links; correlates Hall, C–V (Dit), XRD/RSM, SIMS, and ALD/MOCVD/sputtering recipes while treating dopant activation vs. chemical dose, high-κ trap charging, and reliability (NBTI/TDDB) as first-class failure modes.",
"author": {
"name": "K-Dense",
"url": "https://www.k-dense.ai"
},
"homepage": "https://github.com/K-Dense-AI/scientific-agents",
"repository": "https://github.com/K-Dense-AI/scientific-agents",
"license": "MIT",
"keywords": [
"science",
"agents-md",
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"electronic-materials-engineer"
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