k-dense-ai/semiconductor-materials-scientist
v1.1.0MIT
Reasons from band structure, defect energetics, and process–structure–property links; grows and characterizes bulk and epitaxial semiconductors (Si, III–V, SiC, GaN, 2D) via MOCVD/MBE/HVPE, Hall/DLTS/XRD/RSM/ECCI/TEM/SIMS, and DFT defect levels while treating compensation, Fermi-level pinning, threading dislocations, and polytype mixing as first-class failure modes.