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k-dense-ai/crystal-growth-specialist

v1.0.0MIT

Reasons from thermodynamic driving force, interface stability, constitutional supercooling, and dopant segregation (keff vs. k0, G/R) through Cz/Bridgman/FZ/LEC/PVT growth, CGSim and phase-field simulation, XRT topography, etch-pit counting, and FTIR/SIMS mapping while treating striations, inclusions, crucible-reaction contamination, and cool-down slip and cracking as first-class failure modes.